Ultra-wide-bandgap semiconductors have emerged as a potential route towards next generation power and RF devices with superior performance surpassing conventional Si, GaAs, SiC or GaN. Gallium oxide (Ga2O3) is an UWBG material of particular interest due to the availability of large-area native substrates with a wide range of doping required for various applications. Despite tremendous advances, there are many outstanding technical challenges that must be addressed in order to realize the full potential of Ga2O3. These include but are not limited to: substrates development, thin film epitaxy and doping, advanced device scaling and fabrication; thermal management; and benchmarking circuit performance.

 

View the submission guidelines for further instructions.

In this rapidly advancing field, this workshop provides a premier platform for reporting recent advances in materials, device and circuit development and identify major scientific gaps. The intent is to create actionable coordination across government, industry and academia to enable rapid transitional technologies in this field.

There will be no written proceedings to facilitate a friendly and stimulating environment for scientific discussions among participants from domestic and international Ga2O3 research groups. Attendees can expect topics including, but not limited to: bulk and epitaxial growth, theory/modeling/simulations, device and circuit advancements, materials characterization and novel properties, thermal management, electro-thermal co-design and heterostructures.

  • Theory, Modeling and Simulation
  • Bulk Growth
  • Epitaxial Growth
  • Electronic Transport and Breakdown Phenomena
  • Dielectric Interfaces
  • Advanced Characterization Techniques
  • Electronic and Photonic Devices, Circuits and Applications
  • Material and Device Processing and Fabrication Techniques
  • Heterogeneous Material Integration

April 30, 2025   
Final Extended Abstract Deadline

May 15, 2025    
Author Acceptance Notifications